The influence of multiple-charge impurity centers on the potential distribution in the semiconductor surficial region

Abstract

The influence of multiple-charge impurity centers on the potential distribution in the semiconductor surficial region

S.A. Bogdanov, A.G. Zakharov, I.V. Pisarenko

Incoming article date: 16.02.2013

The mathematical model of the potential distribution in the semiconductor surficial region in the presence of deep-lying levels in its forbidden zone which specified by multiple-charge impurity centers has been developed. The simulation results can be used for the width of the space charge region estimation, for the prognostication of the most probable mechanism of the charge carriers transfer in metal-semiconductor structure with multiple-charge deep-lying levels and also for the prognostication of the barrier capacitance value. It can be used in the development of solid-state electronic devices with improved values of some parameters.

Keywords: Poisson’s equation, multiple-charge impurity center, potential distribution, deep-lying levels