In this paper, a new simple and accurate hybrid table/analytical model of the MOSFET drain current based on the interpolation of table parameters is proposed. This new hybrid table model has an accuracy similar to the pure table models but requires no complex parameter extraction. The drain current in the hybrid model is calculated as the product of the analytical model current and the correction factor approximated by two-dimensional series.

Keywords: MOS-transistor, MOSFET parameters, cryogenic temperature, parametric identification