Theoretical analysis of constructive and technological restrictions in the avalanche photodiode structure for photon-counting mode is made in this work. It is shown that critical parameters are load resistance and a time constant of a photodiode internal capacity recharge. For decreasing this time constant one needs size restriction of separate section of the photodiode and association of several such sections on a crystal together with registration schemes.

Keywords: Avalanche photodiode, Mode of the account of photons, Constructive-technological restrictions, Model of avalanche breakdown

The development of semiconductor nanoelectronics industry in the world in terms of globalization is reviewed. The main roadmaps of information technologies development are outlined. The primary method for the costs reduction is the global harmonization of technical solutions (e.g., an international standardization system) which can be achieved through the creation of global alliances. These global alliances lead to partition sectors of the market and the exchange of technological advances and by promoting national programs of information technology development, combining the efforts of public and private sectors. The forecast of the possible development of Nan electronics industry in Russia is given.

Keywords: semiconductor scheme, chip manufacturing, globalization, nanoscale semiconductor devices, information networks, chip design, design methods.